【英文标准名称】:MethodsofChemicalAnalysisofAlloySteels
【原文标准名称】:铌铁合金的标准规范
【标准号】:ASTMA55
【标准状态】:作废
【国别】:
【发布日期】:
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:
【标准类型】:()
【标准水平】:()
【中文主题词】:铁;铌;钶;铁合金
【英文主题词】:
【摘要】:
【中国标准分类号】:H42
【国际标准分类号】:
【页数】:
【正文语种】:


【英文标准名称】:StandardTestMethodforSeparatinganIonizingRadiation-InducedMOSFETThresholdVoltageShiftIntoComponentsDuetoOxideTrappedHolesandInterfaceStatesUsingtheSubthresholdCurrent-VoltageCharacteristics
【原文标准名称】:利用亚阈值安伏特性测定由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移分量的标准试验方法
【标准号】:ASTMF996-1998(2003)
【标准状态】:现行
【国别】:
【发布日期】:1998
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:场效应晶体管;半导体
【英文主题词】:c/vcharacteristics;current-voltagecharacteristics;interfacestates;ionizingradiation;MOSFET;oxide-trappedholes;thresholdvoltageshift;trappedholes
【摘要】:Theelectricalpropertiesofgateandfieldoxidesarealteredbyionizingradiation.Thetimedependentanddoserateeffectsoftheionizingradiationcanbedeterminedbycomparingpre-andpost-irradiationvoltageshifts,x0394;Votandx0394;Vit.ThistestmethodprovidesameansforevaluationoftheionizingradiationresponseofMOSFETsandisolationparasiticMOSFETs.Themeasuredvoltageshifts,x0394;Votandx0394;Vit,canprovideameasureoftheeffectivenessofprocessingvariationsontheionizingradiationresponse.Thistechniquecanbeusedtomonitorthetotal-doseresponseofaprocesstechnology.1.1Thistestmethodcoverstheuseofthesubthresholdchargeseparationtechniqueforanalysisofionizingradiationdegradationofagatedielectricinametal-oxide-semiconducter-field-effecttransistor(MOSFET)andanisolationdielecticinaparasiticMOSFET.Thesubthresholdtechniqueisusedtoseparatetheionizingradiation-inducedinversionvoltageshift,VINVintovoltageshiftsduetooxidetrappedcharge,Votandinterfacetraps,Vit.Thistechniqueusesthepre-andpost-irradiationdraintosourcecurrentversusgatevoltagecharacteristicsintheMOSFETsubthresholdregion.1.2ProceduresaregivenformeasuringtheMOSFETsubthresholdcurrent-voltagecharacteristicsandforthecalculationofresults.1.3TheapplicationofthistestmethodrequirestheMOSFETtohaveasubstrate(body)contact.1.4Bothpre-andpost-irradiationMOSFETsubthresholdsourceordraincurvesmustfollowanexponentialdependenceongatevoltageforaminimumoftwodecadesofcurrent.1.5ThevaluesgiveninSIunitsaretoberegardedasstandard.Nootherunitsofmeasurementareincludedinthistestmethod.1.6Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L42
【国际标准分类号】:
【页数】:7P.;A4
【正文语种】: